Leave your feedback Share Copy URL https://eevb.net/video/4bs0rp1nlOl.html Email Facebook Twitter LinkedIn Pinterest Tumblr Share on Facebook Share on Twitter Reimagining DRAM: Scaling Limits and the Shift to 3D Memory [TT6qIUHXnDI] Health Updated on August 06, 2026 EDT — Published on August 06, 2026 EDT Discover how DRAM technology is evolving to meet the demands of higher memory density and performance. This video explores the transition from traditional 2D scaling to advanced 3D architectures, highlighting innovations such as high aspect ratio etching, atomic layer deposition (ALD), and the use of molybdenum to overcome resistance challenges. Learn how stacking chips to create high bandwidth memory (HBM) and EUV patterning are enabling unprecedented density, and see how architectural changes like the four F² approach and 3D scaling are shaping the future of memory. These breakthroughs are paving the way for DRAM densities comparable to fitting half a billion people onto Manhattan. Key topics covered: - DRAM scaling and density improvements - High bandwidth memory (HBM) and TSVs - Advanced etch and deposition processes - EUV patterning for 2D scaling - Four F² architecture and channel formation - Molybdenum for reduced resistivity - 3D DRAM cell stacking and future roadmaps Stay tuned for more technical insights and innovations from Lam Research. Explore career opportunities at Lam Research: Website: Social Media: LinkedIn: Facebook: X: Instagram: mB5FWyiXiLj pPNX3kD5uLy nx1DTt1ojjE BglFfAd9wq5 E28J2OMTKLB deoLM6xawu1
Discover how DRAM technology is evolving to meet the demands of higher memory density and performance. This video explores the transition from traditional 2D scaling to advanced 3D architectures, highlighting innovations such as high aspect ratio etching, atomic layer deposition (ALD), and the use of molybdenum to overcome resistance challenges. Learn how stacking chips to create high bandwidth memory (HBM) and EUV patterning are enabling unprecedented density, and see how architectural changes like the four F² approach and 3D scaling are shaping the future of memory. These breakthroughs are paving the way for DRAM densities comparable to fitting half a billion people onto Manhattan. Key topics covered: - DRAM scaling and density improvements - High bandwidth memory (HBM) and TSVs - Advanced etch and deposition processes - EUV patterning for 2D scaling - Four F² architecture and channel formation - Molybdenum for reduced resistivity - 3D DRAM cell stacking and future roadmaps Stay tuned for more technical insights and innovations from Lam Research. Explore career opportunities at Lam Research: Website: Social Media: LinkedIn: Facebook: X: Instagram: mB5FWyiXiLj pPNX3kD5uLy nx1DTt1ojjE BglFfAd9wq5 E28J2OMTKLB deoLM6xawu1